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Xu, Y.; Narumi, Kazumasa; Miyashita, Kiyoshi*; Naramoto, Hiroshi
Surface and Interface Analysis, 35(1), p.99 - 103, 2003/01
Times Cited Count:9 Percentile:25.16(Chemistry, Physical)no abstracts in English
Lavrentiev, V.; Abe, Hiroaki; Yamamoto, Shunya; Naramoto, Hiroshi; Narumi, Kazumasa
Surface and Interface Analysis, 35(1), p.36 - 39, 2003/01
Times Cited Count:8 Percentile:22.66(Chemistry, Physical)no abstracts in English
Teraoka, Yuden; Yoshigoe, Akitaka
Proceedings of 3rd International Symposium on Atomic Level Characterizations for New Materials and Devices '01 (ALC '01), p.341 - 344, 2001/11
no abstracts in English
Narumi, Kazumasa; Naramoto, Hiroshi
Proceedings of 3rd International Symposium on Atomic Level Characterizations for New Materials and Devices '01 (ALC '01), p.322 - 325, 2001/11
Transformation of C thin films on Si(111) substrates by irradiation with 360 keV Ar and Ar ions at fluences of 1.010/cm to 1.110/cm was investigated by atomic force microscopy. As-prepared insulating films become conductive after the irradiation up to the fluence of 1.110/cm, where the film is found to be almost transformed into a form of amorphous carbon by Raman-spectroscopy analysis. This results from conductive carbon species due to decomposition of the C molecule. Considerable topographic change is observed up to the fluence of 1.110/cm where the lines characteristic of the C film fade out of the Raman spectra, which is due to sputtering and to densification of the C molecule.